Vacuum Hot Pressing Furnace 

High Temperature Vacuum Sintering Furnace For Laboratory Powder Materials Research SPECIFICATIONS Thisvacuum sintering furnaceis cycle operation type, widely used in functional ceramics, optical material, composite material, hard alloy, powder metallurgy material sintering processing under high temperature condition, it can also be used in forming sinter with charging protection situation. Model Vacuum Sintering Tube Furnace   TOB-VCTF-LAB Limited cold vacuum degree 5×10﹣3Pa Heating temperature 2000℃, with control precision±1℃ Temperature control mode Tungsten lai thermocouple + infrared instrument Power 25KW Tube dimension Ф80×120mm Rate of pressure rise ≤2Pa/h Voltage Single phase 380v,50hz Inflation pressure <0.03Mpa (N2 or Ar) Warranty One year limited warranty with lifetime support  Email : tob.amy@tobmachine.com  Skype : amywangbest86  Whatsapp/Phone number : +86 181 2071 5609

1200 ℃ slider-type dual-zone PECVD system

The Semiconductor Power Tester Resistivity in type ST-2722-SZ can measure the resistivity of any  semiconductor powder material. It has no requirement for materials. It only requires the sample`s test value to be within the measuring range of the instrument.

The TOB-4518B automatic cylindrical cell sorting machine integrates insulating ring pasting, high-precision voltage and internal resistance testing, barcode scanning, and multi-channel sorting. Designed for 18650, 21700, 26650, and 32700 cells, it enables efficient sorting, consistency control, and MES data traceability in lithium-ion battery production lines.

This polyethylene separator is a class A battery PE separator, the surface is smooth and clean without pollution, and the length is 1000m.

The lithium-rich manganese-based material is a solid solution cathode material, which can exert a specific capacity of 250mAh/g or more at 2~4.8V, and has good cycle performance.

The DZF-6020-HT series vacuum oven is CE certified vacuum oven with 30 segments precise temperature controller upto 500°C. Radiant wall heating system is employed to provide optional temperature uniformity.

TOB-FCDE1428 with RH1%-10%, suitable for IC, BGA, SMD, Epitaxial wafer, Silicon wafer, graphene, Super moisture sensitive device, CAAS arsenic, Chemical materials, industrial precious metals.